SBC807-25LT1G Overview

This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In the part, the transition frequency is 100MHz.Breakdown input voltage is 45V volts.During maximum operation, collector current can be as low as 500mA volts.

SBC807-25LT1G Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

SBC807-25LT1G Applications

There are a lot of ON Semiconductor SBC807-25LT1G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting