SBC807-25LT3G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
SBC807-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC807-25LT3G Applications
There are a lot of ON Semiconductor SBC807-25LT3G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
