SBC817-40LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.A collector emitter saturation voltage of 700mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.As you can see, the part has a transition frequency of 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts is possible.

SBC817-40LT1G Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC817-40LT1G Applications

There are a lot of ON Semiconductor SBC817-40LT1G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface