SBC856ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A transition frequency of 100MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856ALT1G Applications
There are a lot of ON Semiconductor SBC856ALT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
