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2PB1219AS,135

  • 2PB1219AS,135
  • 2PB1219AS,135

2PB1219AS,135

2PB1219AS,135

Nexperia USA Inc.

2PB1219AS,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB1219AS,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PB1219
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 140MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.6 V
Collector-Base Capacitance-Max 15pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.422400 $12.4224
10 $11.719245 $117.19245
100 $11.055892 $1105.5892
500 $10.430087 $5215.0435
1000 $9.839704 $9839.704
2PB1219AS,135 Product Details

2PB1219AS,135 Overview


DC current gain in this device equals 170 @ 150mA 10V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.Emitter base voltages of 5V can achieve high levels of efficiency.140MHz is present in the transition frequency.During maximum operation, collector current can be as low as 500mA volts.

2PB1219AS,135 Features


the DC current gain for this device is 170 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 140MHz

2PB1219AS,135 Applications


There are a lot of Nexperia USA Inc. 2PB1219AS,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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