TMBT3906,LM

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Manufacturer part number:TMBT3906,LM

Manufacturer:Toshiba Semiconductor and Storage

Description:PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Case Package:SOT-23

Datasheet:TMBT3906,LM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	320mW
Power - Max	320mW
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	400mV
Max Collector Current	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price

TMBT3906,LM Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.