TMBT3906,LM Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

TMBT3906,LM Features

the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA

TMBT3906,LM Applications

There are a lot of Toshiba Semiconductor and Storage
TMBT3906,LM applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting