SMMBTA92LT1G Overview
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.Maximum collector currents can be below 500mA volts.
SMMBTA92LT1G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
SMMBTA92LT1G Applications
There are a lot of ON Semiconductor SMMBTA92LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
