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SBC857ALT1G

  • SBC857ALT1G
  • SBC857ALT1G

SBC857ALT1G

SBC857ALT1G

ON Semiconductor

SBC857ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SBC857ALT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Max Frequency 100MHz
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 50V
hFE Min 125
Continuous Collector Current 100mA
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.039712 $0.039712
500 $0.029200 $14.6
1000 $0.024333 $24.333
2000 $0.022324 $44.648
5000 $0.020864 $104.32
10000 $0.019408 $194.08
15000 $0.018770 $281.55
50000 $0.018456 $922.8
SBC857ALT1G Product Details

SBC857ALT1G Overview


This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 100mA.A transition frequency of 100MHz is present in the part.During maximum operation, collector current can be as low as 100mA volts.

SBC857ALT1G Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz

SBC857ALT1G Applications


There are a lot of ON Semiconductor SBC857ALT1G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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