BC848B RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC848B RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03630
$0.1089
BC848B RFG Product Details
BC848B RFG Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 500mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Product comes in SOT-23 supplier package.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BC848B RFG Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 500mV @ 5mA, 100mA the supplier device package of SOT-23
BC848B RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC848B RFG applications of single BJT transistors.