SBC857BWT1G Overview

This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.100MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

SBC857BWT1G Features

the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

SBC857BWT1G Applications

There are a lot of ON Semiconductor SBC857BWT1G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver