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SGF23N60UFDM1TU

  • SGF23N60UFDM1TU
  • SGF23N60UFDM1TU

SGF23N60UFDM1TU

SGF23N60UFDM1TU

ON Semiconductor

SGF23N60UFDM1TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

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SGF23N60UFDM1TU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number SG*23N60
Input Type Standard
Power - Max 75W
Reverse Recovery Time 60ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Test Condition 300V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Gate Charge 49nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/60ns
Switching Energy 115μJ (on), 135μJ (off)
SGF23N60UFDM1TU Product Details

SGF23N60UFDM1TU  Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High-Speed Switching is required.



SGF23N60UFDM1TU  Features

High-Speed Switching

Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A

High Input Impedance

CO-PAK, IGBT with FRD: trr = 42ns (typ.)



SGF23N60UFDM1TU  Applications

AC & DC Motor control, General Purpose Inverters, Robotics, Servo Controls




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