IXBH40N160

new-10%

Manufacturer part number:IXBH40N160

Manufacturer:IXYS

Description:IGBT 1600V 33A 350W TO247AD

Case Package:SOT-23

Datasheet:IXBH40N160 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2006
Series	BIMOSFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Additional Feature	BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.6kV
Max Power Dissipation	350W
Current Rating	33A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	60ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6kV
Max Collector Current	33A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.6kV
Voltage - Collector Emitter Breakdown (Max)	1600V
Turn On Time	260 ns
Test Condition	960V, 20A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	7.1V @ 15V, 20A
Turn Off Time-Nom (toff)	310 ns
Gate Charge	130nC
Current - Collector Pulsed (Icm)	40A
Gate-Emitter Voltage-Max	20V
VCEsat-Max	6 V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	700ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free