IXSH35N120A

new-10%

Manufacturer part number:IXSH35N120A

Manufacturer:IXYS

Description:IGBT 1200V 70A 300W TO247

Case Package:SOT-23

Datasheet:IXSH35N120A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*35N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	80 ns
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	400 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	230 ns
Test Condition	960V, 35A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 35A
Turn Off Time-Nom (toff)	1100 ns
Gate Charge	150nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	80ns/400ns
Switching Energy	10mJ (off)
Gate-Emitter Voltage-Max	20V
VCEsat-Max	4 V
RoHS Status	RoHS Compliant
Lead Free	Lead Free