Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4BC20FD-SPBF

IRG4BC20FD-SPBF

IRG4BC20FD-SPBF

Infineon Technologies

IRG4BC20FD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20FD-SPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 60W
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $3.72100 $186.05
IRG4BC20FD-SPBF Product Details

IRG4BC20FD-SPBF Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard D2Pak package

Lead-Free



IRG4BC20FD-SPBF Benefits

Generation 4 IGBTs offer the highest efficiencies available

IGBTs optimized for specific application conditions

HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require less/no snubbing

Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News