SGR2N60UFDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGR2N60UFDTM Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
25W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
2.4A
Test Condition
300V, 1.2A, 200 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 1.2A
Gate Charge
9nC
Current - Collector Pulsed (Icm)
10A
Td (on/off) @ 25°C
15ns/80ns
Switching Energy
30μJ (on), 13μJ (off)
SGR2N60UFDTM Product Details
SGR2N60UFDTM Description
A 600V short circuit rated ultrafast IGBT with a low conduction and switching losses is the SGR2N60UFDTM. This UFD series is intended for uses where high speed switching is necessary, such as motor control and general inverters. This product is all-purpose and appropriate for a wide range of uses. Insulated Gate Bipolar Transistors (IGBTs) from Fairchild's UF series have minimal conduction and switching losses. The UF series is intended for uses where high speed switching is necessary, such as motor control and general inverters.
SGR2N60UFDTM Features
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A