SMMBT3904TT1G Overview

This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 300MHz is present in the part.Maximum collector currents can be below 200mA volts.

SMMBT3904TT1G Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

SMMBT3904TT1G Applications

There are a lot of ON Semiconductor SMMBT3904TT1G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface