SMMBT3906LT3G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

SMMBT3906LT3G Features

the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

SMMBT3906LT3G Applications

There are a lot of ON Semiconductor SMMBT3906LT3G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver