SMMBT3906LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBT3906LT3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
250MHz
Base Part Number
MMBT3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.4 V
Turn On Time-Max (ton)
70ns
Collector-Base Capacitance-Max
4.5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.078840
$0.07884
500
$0.057971
$28.9855
1000
$0.048309
$48.309
2000
$0.044320
$88.64
5000
$0.041421
$207.105
10000
$0.038531
$385.31
15000
$0.037264
$558.96
50000
$0.036641
$1832.05
SMMBT3906LT3G Product Details
SMMBT3906LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
SMMBT3906LT3G Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 250MHz
SMMBT3906LT3G Applications
There are a lot of ON Semiconductor SMMBT3906LT3G applications of single BJT transistors.