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2SCRC41CT116R

  • 2SCRC41CT116R
  • 2SCRC41CT116R

2SCRC41CT116R

2SCRC41CT116R

ROHM Semiconductor

2SCRC41CT116R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCRC41CT116R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.420398 $0.420398
10 $0.396602 $3.96602
100 $0.374152 $37.4152
500 $0.352974 $176.487
1000 $0.332995 $332.995
2SCRC41CT116R Product Details

2SCRC41CT116R Overview


This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.

2SCRC41CT116R Features


the DC current gain for this device is 180 @ 2mA 6V
the vce saturation(Max) is 500mV @ 1mA, 10mA

2SCRC41CT116R Applications


There are a lot of ROHM Semiconductor 2SCRC41CT116R applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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