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SNSS20101JT1G

  • SNSS20101JT1G
  • SNSS20101JT1G

SNSS20101JT1G

SNSS20101JT1G

ON Semiconductor

SNSS20101JT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SNSS20101JT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 225mW
Base Part Number NSS20101
Transistor Type NPN
Collector Emitter Voltage (VCEO) 220mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 20V
Frequency - Transition 350MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.174847 $0.174847
10 $0.164950 $1.6495
100 $0.155613 $15.5613
500 $0.146805 $73.4025
1000 $0.138495 $138.495
SNSS20101JT1G Product Details

SNSS20101JT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).During maximum operation, collector current can be as low as 1A volts.

SNSS20101JT1G Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 220mV @ 100mA, 1A

SNSS20101JT1G Applications


There are a lot of ON Semiconductor SNSS20101JT1G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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