SPZT751T1G Overview

This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 75MHz.When collector current reaches its maximum, it can reach 2A volts.

SPZT751T1G Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 75MHz

SPZT751T1G Applications

There are a lot of ON Semiconductor SPZT751T1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver