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SS8050DTA

SS8050DTA

SS8050DTA

ON Semiconductor

SS8050DTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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SS8050DTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating 1.5A
Frequency 100MHz
Base Part Number SS8050
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 85
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.138240 $0.13824
10 $0.130415 $1.30415
100 $0.123033 $12.3033
500 $0.116069 $58.0345
1000 $0.109499 $109.499
SS8050DTA Product Details

SS8050DTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).Parts of this part have transition frequencies of 190MHz.The breakdown input voltage is 25V volts.A maximum collector current of 1.5A volts is possible.

SS8050DTA Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz

SS8050DTA Applications


There are a lot of ON Semiconductor SS8050DTA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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