SS9012GBU Overview
DC current gain in this device equals 112 @ 50mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A maximum collector current of 500mA volts can be achieved.
SS9012GBU Features
the DC current gain for this device is 112 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
SS9012GBU Applications
There are a lot of ON Semiconductor SS9012GBU applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
