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SS9012GBU

SS9012GBU

SS9012GBU

ON Semiconductor

SS9012GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SS9012GBU Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating -500mA
Base Part Number SS9012
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 112 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage -180mV
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 64
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.197034 $0.197034
10 $0.185882 $1.85882
100 $0.175360 $17.536
500 $0.165434 $82.717
1000 $0.156070 $156.07
SS9012GBU Product Details

SS9012GBU Overview


DC current gain in this device equals 112 @ 50mA 1V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.A VCE saturation (Max) of 600mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A maximum collector current of 500mA volts can be achieved.

SS9012GBU Features


the DC current gain for this device is 112 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA

SS9012GBU Applications


There are a lot of ON Semiconductor SS9012GBU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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