FGPF4565 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGPF4565 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Weight
2.27g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
30W
Collector Emitter Voltage (VCEO)
1.88V
Max Collector Current
170A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.88V
Test Condition
400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.88V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
40.3nC
Td (on/off) @ 25°C
11.2ns/40.8ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.754720
$0.75472
10
$0.712000
$7.12
100
$0.671698
$67.1698
500
$0.633677
$316.8385
1000
$0.597809
$597.809
FGPF4565 Product Details
FGPF4565 Description
FGPF4565 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF4565 MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor AFT09MS015NT1 has the common source configuration.