FGH75T65SQDNL4

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Manufacturer part number:FGH75T65SQDNL4

Manufacturer:ON Semiconductor

Description:FGH75T65SQDNL4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH75T65SQDNL4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-4
Operating Temperature	-55°C~175°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Terminal Finish	Tin (Sn)
Reach Compliance Code	compliant
Input Type	Standard
Power - Max	375W
Reverse Recovery Time	134ns
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	200A
Test Condition	400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
IGBT Type	Trench Field Stop
Gate Charge	152nC
Td (on/off) @ 25°C	44ns/208ns
Switching Energy	1.25mJ (on), 1.26mJ (off)

Quantity	Unit Price	Ext. Price
1	$9.49000	$9.49
10	$8.62600	$86.26
450	$5.49840	$2474.28
900	$4.90748	$4416.732

FGH75T65SQDNL4 Features

? Extremely Efficient Trench with Field Stop Technology
? TJmax = 175°C
? Improved Gate Control Lowers Switching Losses
? Separate Emitter Drive Pin? TO?247?4L for Minimal Eon Losses
? Optimized for High Speed Switching
? These are Pb?Free Device

FGH75T65SQDNL4 Applications

? Solar Inverter
? Uninterruptible Power Inverter Supplies (UPS)
? Neutral Point Clamp Topology

FGH75T65SQDNL4 Description

This insulated gate bipolar transistor (IGBT) FGH75T65SQDNL4 features a rugged and cost-effective field-stop IV trench structure that provides excellent performance in demanding switching applications while providing low on voltage and minimum switching loss. In addition, the new equipment uses TO-247-4L package, which significantly reduces the EON loss compared with the standard-247-3L package. IGBT is ideal for uninterruptible power supplies and solar applications. The device integrates a soft, fast co-packaged low forward voltage continuous flow diode.