2SC4134S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SC4134S-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
800mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.29913
$0.29913
2SC4134S-E Product Details
2SC4134S-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 100mA 5V.A VCE saturation (Max) of 400mV @ 40mA, 400mA means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.The device has a 100V maximal voltage - Collector Emitter Breakdown.
2SC4134S-E Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 400mA the supplier device package of TP
2SC4134S-E Applications
There are a lot of Rochester Electronics, LLC 2SC4134S-E applications of single BJT transistors.