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MJF15031G

MJF15031G

MJF15031G

ON Semiconductor

MJF15031G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJF15031G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureUL RECOGNIZED
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating8A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 2V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage150V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 16.12mm
Length 9.96mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2745 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.84000$1.84
50$1.55640$77.82
100$1.32600$132.6
500$1.08946$544.73

MJF15031G Product Details

MJF15031G Overview


This device has a DC current gain of 20 @ 4A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.In this part, there is a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

MJF15031G Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz

MJF15031G Applications


There are a lot of ON Semiconductor MJF15031G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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