MJF15031G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJF15031G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 2V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
16.12mm
Length
9.96mm
Width
4.9mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.84000
$1.84
50
$1.55640
$77.82
100
$1.32600
$132.6
500
$1.08946
$544.73
1,000
$0.90269
$0.90269
MJF15031G Product Details
MJF15031G Overview
This device has a DC current gain of 20 @ 4A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.In this part, there is a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJF15031G Features
the DC current gain for this device is 20 @ 4A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 8A a transition frequency of 30MHz
MJF15031G Applications
There are a lot of ON Semiconductor MJF15031G applications of single BJT transistors.