Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TIP31BG

TIP31BG

TIP31BG

ON Semiconductor

TIP31BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP31BG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP31
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7752 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.66000$0.66
50$0.54260$27.13
100$0.44280$44.28
500$0.35008$175.04

TIP31BG Product Details

TIP31BG Overview


In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.As you can see, the part has a transition frequency of 3MHz.During maximum operation, collector current can be as low as 3A volts.

TIP31BG Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

TIP31BG Applications


There are a lot of ON Semiconductor TIP31BG applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News