BCP5616QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCP5616QTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Max Breakdown Voltage
80V
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.106080
$0.10608
10
$0.100075
$1.00075
100
$0.094411
$9.4411
500
$0.089067
$44.5335
1000
$0.084025
$84.025
BCP5616QTA Product Details
BCP5616QTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 80V volts that it can take.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP5616QTA Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 150MHz
BCP5616QTA Applications
There are a lot of Diodes Incorporated BCP5616QTA applications of single BJT transistors.