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TIP31G

TIP31G

TIP31G

ON Semiconductor

TIP31G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP31G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP31
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.54000 $0.54
50 $0.43600 $21.8
100 $0.35090 $35.09
500 $0.27792 $138.96
1,000 $0.21712 $0.21712
TIP31G Product Details

TIP31G Overview


This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 3MHz.In extreme cases, the collector current can be as low as 3A volts.

TIP31G Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

TIP31G Applications


There are a lot of ON Semiconductor TIP31G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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