TIP47G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP47G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
250V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
10MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP47
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
15.75mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.73000
$0.73
50
$0.60020
$30.01
100
$0.49270
$49.27
500
$0.39288
$196.44
1,000
$0.31754
$0.31754
TIP47G Product Details
TIP47G Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 200mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 10MHz.A maximum collector current of 1A volts is possible.
TIP47G Features
the DC current gain for this device is 30 @ 300mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 200mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 10MHz
TIP47G Applications
There are a lot of ON Semiconductor TIP47G applications of single BJT transistors.