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TN6718A

TN6718A

TN6718A

ON Semiconductor

TN6718A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TN6718A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 1999
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 1.2A
In-Stock:36618 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.273866$1.273866
10$1.201760$12.0176
100$1.133736$113.3736
500$1.069562$534.781
1000$1.009021$1009.021

TN6718A Product Details

TN6718A Overview


In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.This device displays a 100V maximum voltage - Collector Emitter Breakdown.

TN6718A Features


the DC current gain for this device is 50 @ 250mA 1V
the vce saturation(Max) is 500mV @ 10mA, 250mA

TN6718A Applications


There are a lot of ON Semiconductor TN6718A applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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