TN6718A

join

new-10%

Manufacturer part number:TN6718A

Manufacturer:ON Semiconductor

Description:TN6718A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:TN6718A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Power - Max	1W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 250mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	1.2A

Quantity	Unit Price	Ext. Price
1	$1.273866	$1.273866
10	$1.201760	$12.0176
100	$1.133736	$113.3736
500	$1.069562	$534.781
1000	$1.009021	$1009.021

TN6718A Overview

In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.This device displays a 100V maximum voltage - Collector Emitter Breakdown.