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HAT2165HWS-E

  • HAT2165HWS-E
  • HAT2165HWS-E

HAT2165HWS-E

HAT2165HWS-E

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.3m Ω @ 27.5A, 10V ±20V 5180pF @ 10V 33nC @ 4.5V 30V SC-100, SOT-669

SOT-23

HAT2165HWS-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5180pF @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
HAT2165HWS-E Product Details

HAT2165HWS-E Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5180pF @ 10V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

HAT2165HWS-E Features


a 30V drain to source voltage (Vdss)


HAT2165HWS-E Applications


There are a lot of Renesas Electronics America
HAT2165HWS-E applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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