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HAT2175H-EL-E

HAT2175H-EL-E

HAT2175H-EL-E

Renesas Electronics America

MOSFET N-CH 100V 15A 5LFPAK

SOT-23

HAT2175H-EL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 15A
[email protected] Reflow Temperature-Max (s) 20
Pin Count 5
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 15W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 15W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1445pF @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.046Ohm
Pulsed Drain Current-Max (IDM) 60A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.403237 $0.403237
10 $0.380412 $3.80412
100 $0.358880 $35.888
500 $0.338566 $169.283
1000 $0.319402 $319.402

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