IXFN55N50

new-10%

Manufacturer part number:IXFN55N50

Manufacturer:IXYS

Description:MOSFET N-CH 500V 55A SOT-227B

Case Package:SOT-23

Datasheet:IXFN55N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Weight	46g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	80mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	55A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	220A
Dual Supply Voltage	500V
Recovery Time	250 ns
Isolation Voltage	2.5kV
Nominal Vgs	4.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free