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RJK2055DPA-WS#J0

RJK2055DPA-WS#J0

RJK2055DPA-WS#J0

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 69m Ω @ 10A, 10V ±30V 2400pF @ 25V 38nC @ 10V 200V 8-PowerWDFN

SOT-23

RJK2055DPA-WS#J0 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 69m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RJK2055DPA-WS#J0 Product Details

RJK2055DPA-WS#J0 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2400pF @ 25V.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

RJK2055DPA-WS#J0 Features


a 200V drain to source voltage (Vdss)


RJK2055DPA-WS#J0 Applications


There are a lot of Renesas Electronics America
RJK2055DPA-WS#J0 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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