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2N7052

2N7052

2N7052

Rochester Electronics, LLC

2N7052 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N7052 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Power - Max 625mW
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
2N7052 Product Details

2N7052 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 1A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.200MHz is present in the transition frequency.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.

2N7052 Features


the DC current gain for this device is 1000 @ 1A 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 200MHz

2N7052 Applications


There are a lot of Rochester Electronics, LLC 2N7052 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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