2N7052 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N7052 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Power - Max
625mW
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
2N7052 Product Details
2N7052 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 1A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.200MHz is present in the transition frequency.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
2N7052 Features
the DC current gain for this device is 1000 @ 1A 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA a transition frequency of 200MHz
2N7052 Applications
There are a lot of Rochester Electronics, LLC 2N7052 applications of single BJT transistors.