2SC4134T-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4134T-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
800mW
Base Part Number
2SC4134
Pin Count
3
Configuration
Single
Power - Max
800mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SC4134T-TL-E Product Details
2SC4134T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SC4134T-TL-E Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 400mA the emitter base voltage is kept at 6V
2SC4134T-TL-E Applications
There are a lot of ON Semiconductor 2SC4134T-TL-E applications of single BJT transistors.