2SC4134T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SC4134T-TL-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
2SC4134T-TL-E Applications
There are a lot of ON Semiconductor 2SC4134T-TL-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
