MMBTA93LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBTA93LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
-200V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
200V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-200V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.322518
$0.322518
10
$0.304262
$3.04262
100
$0.287040
$28.704
500
$0.270792
$135.396
1000
$0.255465
$255.465
MMBTA93LT1 Product Details
MMBTA93LT1 Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 50MHz.Collector current can be as low as 500mA volts at its maximum.
MMBTA93LT1 Features
the DC current gain for this device is 25 @ 30mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 5V the current rating of this device is -500mA a transition frequency of 50MHz
MMBTA93LT1 Applications
There are a lot of ON Semiconductor MMBTA93LT1 applications of single BJT transistors.