MMBTA93LT1 Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 50MHz.Collector current can be as low as 500mA volts at its maximum.
MMBTA93LT1 Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA93LT1 Applications
There are a lot of ON Semiconductor MMBTA93LT1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
