2SB1274S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SB1274S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220ML
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.20000
$0.2
500
$0.198
$99
1000
$0.196
$196
1500
$0.194
$291
2000
$0.192
$384
2500
$0.19
$475
2SB1274S Product Details
2SB1274S Overview
This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.Single BJT transistor comes in a supplier device package of TO-220ML.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
2SB1274S Features
the DC current gain for this device is 140 @ 500mA 5V the vce saturation(Max) is 1V @ 200mA, 2A the supplier device package of TO-220ML
2SB1274S Applications
There are a lot of Rochester Electronics, LLC 2SB1274S applications of single BJT transistors.