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2SB1274S

2SB1274S

2SB1274S

Rochester Electronics, LLC

2SB1274S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2SB1274S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220ML
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
RoHS StatusNon-RoHS Compliant
In-Stock:37824 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.20000$0.2
500$0.198$99
1000$0.196$196
1500$0.194$291
2000$0.192$384
2500$0.19$475

2SB1274S Product Details

2SB1274S Overview


This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.Single BJT transistor comes in a supplier device package of TO-220ML.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

2SB1274S Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
the supplier device package of TO-220ML

2SB1274S Applications


There are a lot of Rochester Electronics, LLC 2SB1274S applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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