BC849BLT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BC849BLT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant
BC849BLT1 Product Details
BC849BLT1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC849BLT1 Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 100MHz
BC849BLT1 Applications
There are a lot of Rochester Electronics, LLC BC849BLT1 applications of single BJT transistors.