2SC5130 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SC5130 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Power - Max
30W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1.5A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 1.5A
Collector Emitter Breakdown Voltage
400V
Frequency - Transition
20MHz
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.63000
$1.63
10
$1.47000
$14.7
25
$1.31240
$32.81
100
$1.18130
$118.13
250
$1.05000
$262.5
500
$0.91876
$459.38
2SC5130 Product Details
2SC5130 Overview
In this device, the DC current gain is 10 @ 1.5A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 1.5A.Collector current can be as low as 5A volts at its maximum.
2SC5130 Features
the DC current gain for this device is 10 @ 1.5A 4V the vce saturation(Max) is 500mV @ 300mA, 1.5A
2SC5130 Applications
There are a lot of Sanken 2SC5130 applications of single BJT transistors.