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2SC5130

2SC5130

2SC5130

Sanken

2SC5130 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website

SOT-23

2SC5130 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature150°C TJ
PackagingBulk
Published 2001
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation30W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Power - Max 30W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1.5A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 1.5A
Collector Emitter Breakdown Voltage400V
Frequency - Transition 20MHz
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3518 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.63000$1.63
10$1.47000$14.7
25$1.31240$32.81
100$1.18130$118.13
250$1.05000$262.5
500$0.91876$459.38

2SC5130 Product Details

2SC5130 Overview


In this device, the DC current gain is 10 @ 1.5A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 1.5A.Collector current can be as low as 5A volts at its maximum.

2SC5130 Features


the DC current gain for this device is 10 @ 1.5A 4V
the vce saturation(Max) is 500mV @ 300mA, 1.5A

2SC5130 Applications


There are a lot of Sanken 2SC5130 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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