BCX5516H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCX5516H6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
7,000
$0.12027
$0.84189
BCX5516H6327XTSA1 Product Details
BCX5516H6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product comes in the supplier's device package PG-SOT89.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCX5516H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the supplier device package of PG-SOT89
BCX5516H6327XTSA1 Applications
There are a lot of Rochester Electronics, LLC BCX5516H6327XTSA1 applications of single BJT transistors.