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BCX5516H6327XTSA1

BCX5516H6327XTSA1

BCX5516H6327XTSA1

Rochester Electronics, LLC

BCX5516H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BCX5516H6327XTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PG-SOT89
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS StatusROHS3 Compliant
In-Stock:40516 items

Pricing & Ordering

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BCX5516H6327XTSA1 Product Details

BCX5516H6327XTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product comes in the supplier's device package PG-SOT89.Device displays Collector Emitter Breakdown (60V maximal voltage).

BCX5516H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of PG-SOT89

BCX5516H6327XTSA1 Applications


There are a lot of Rochester Electronics, LLC BCX5516H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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