2SC4135T-TL-E Overview

DC current gain in this device equals 200 @ 100mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Collector current can be as low as 2A volts at its maximum.

2SC4135T-TL-E Features

the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V

2SC4135T-TL-E Applications

There are a lot of ON Semiconductor 2SC4135T-TL-E applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter