2SD1623T-TD-E Overview

In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In the part, the transition frequency is 150MHz.Breakdown input voltage is 50V volts.Collector current can be as low as 2A volts at its maximum.

2SD1623T-TD-E Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1623T-TD-E Applications

There are a lot of ON Semiconductor 2SD1623T-TD-E applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting