BUX85G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 100mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 4MHz.A maximum collector current of 2A volts can be achieved.

BUX85G Features

the DC current gain for this device is 30 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 4MHz

BUX85G Applications

There are a lot of ON Semiconductor BUX85G applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface