BD234 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BD234 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
2A
Transition Frequency
3MHz
Frequency - Transition
3MHz
RoHS Status
Non-RoHS Compliant
BD234 Product Details
BD234 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 2V DC current gain.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).As a result, the part has a transition frequency of 3MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).
BD234 Features
the DC current gain for this device is 25 @ 1A 2V the vce saturation(Max) is 600mV @ 100mA, 1A a transition frequency of 3MHz
BD234 Applications
There are a lot of Rochester Electronics, LLC BD234 applications of single BJT transistors.