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FDZ2553N

FDZ2553N

FDZ2553N

Rochester Electronics, LLC

N-CHANNEL POWER MOSFET

SOT-23

FDZ2553N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 18-WFBGA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e2
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 18
Terminal Finish TIN SILVER
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 18
JESD-30 Code R-PBGA-B18
Qualification Status COMMERCIAL
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 9.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1299pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.6A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 9.6A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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