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FJAF6810DTU

FJAF6810DTU

FJAF6810DTU

Rochester Electronics, LLC

FJAF6810DTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FJAF6810DTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Case Connection ISOLATED
Power - Max 60W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 6A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 1.5A, 6A
Voltage - Collector Emitter Breakdown (Max) 750V
Current - Collector (Ic) (Max) 10A
RoHS StatusNon-RoHS Compliant
In-Stock:6168 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.41000$1.41
500$1.3959$697.95
1000$1.3818$1381.8
1500$1.3677$2051.55
2000$1.3536$2707.2
2500$1.3395$3348.75

FJAF6810DTU Product Details

FJAF6810DTU Overview


This device has a DC current gain of 5 @ 6A 5V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 1.5A, 6A.Device displays Collector Emitter Breakdown (750V maximal voltage).

FJAF6810DTU Features


the DC current gain for this device is 5 @ 6A 5V
the vce saturation(Max) is 3V @ 1.5A, 6A

FJAF6810DTU Applications


There are a lot of Rochester Electronics, LLC FJAF6810DTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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