APT100GN120B2G

new-10%

Manufacturer part number:APT100GN120B2G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 1.2KV 245A 3-Pin(3+Tab) T-MAX

Case Package:SOT-23

Datasheet:APT100GN120B2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	960W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	50 ns
Power - Max	960W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	615 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	245A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	100 ns
Test Condition	800V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Turn Off Time-Nom (toff)	935 ns
IGBT Type	Trench Field Stop
Gate Charge	540nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	50ns/615ns
Switching Energy	11mJ (on), 9.5mJ (off)
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free