HGTG30N60B3

new-10%

Manufacturer part number:HGTG30N60B3

Manufacturer:Rochester Electronics, LLC

Description:600 V, NPT IGBT

Case Package:SOT-23

Datasheet:HGTG30N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
Terminal Finish	MATTE TIN
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)	NOT APPLICABLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	208W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Turn On Time	56 ns
Test Condition	480V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	365 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	36ns/137ns
Switching Energy	500μJ (on), 680μJ (off)
RoHS Status	Non-RoHS Compliant